Auflistung nach Schlagwort "Epitaxially grown"

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  • Graphitization process of SiC(0001) studied by electron energy loss spectroscopy 
    Langer, T.; Pfnür, Herbert; Schumacher, H.W.; Tegenkamp, Christoph (College Park, MD : American Institute of Physics, 2009)
    Electron energy loss spectroscopy (EELS) is used to study the transition from the buffer layer to the first graphene layers during graphitization of SiC(0001). Graphene growth is controlled and correlated with spot profile ...
  • Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system 
    Barnscheidt, Yvo; Schmidt, Jan; Osten, H. Jörg (Copenhagen : Munksgaard, 2020)
    The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which ...
  • Layer transfer from chemically etched 150 mm porous si substrates 
    Terheiden, Barbara; Hensen, Jan; Wolf, Andreas; Horbelt, Renate; Plagwitz, Heiko; Brendel, Rolf (Basel : MDPI AG, 2010)
    We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface ...
  • Single photon emission from ODT passivated near-surface GaAs quantum dots 
    Cao, Xin; Yang, Jingzhong; Li, Pengji; Zhang, Yiteng; Rugeramigabo, Eddy P.; Brechtken, Benedikt; Haug, Rolf J.; Zopf, Michael; Ding, Fei (Melville, NY : American Inst. of Physics, 2021)
    Epitaxially grown semiconductor quantum dots are promising candidates for pure single photon and polarization-entangled photon pair emission. Excellent optical properties can typically be ensured only if these so-called ...
  • Surface state conductivity in epitaxially grown Bi1-xSbx(111) films 
    Koch, Julian; Kröger, Philipp; Pfnür, Herbert; Tegenkamp, Christoph (Bristol : Institute of Physics Publishing, 2016)
    Topologically non-trivial surface states were reported first on ${\mathrm{Bi}}_{1-x}$Sb x bulk crystals. In this study we present transport measurements performed on thin ${\mathrm{Bi}}_{1-x}$Sb x -films (up to 24 nm ...
  • Thermomechanical Spalling of Epitaxially Grown Silicon from Porosified Substrates 
    Steckenreiter, Verena; Hensen, Jan; Knorr, Alwina; Niepelt, Raphael; Brendel, Rolf; Kajari-Schröder, Sarah (London : Elsevier Ltd., 2016)
    We combine two kerfless approaches to unite advantages of both processes: the epitaxial layer transfer based on porous silicon (PSI process) and the lift-off of a thin silicon layer from a substrate via controlled spalling ...